首页>
外国专利>
MOSFET MOSFET MOSFET CIRCUIT ARCHITECTURE FOR THE 1/f NOISE REDUCTION AND AMPLIFIER OFHAVING THE MOSFET CIRCUIT ARCHITECTURE
MOSFET MOSFET MOSFET CIRCUIT ARCHITECTURE FOR THE 1/f NOISE REDUCTION AND AMPLIFIER OFHAVING THE MOSFET CIRCUIT ARCHITECTURE
展开▼
机译:MOSFET MOSFET电路架构,用于降低1 / f噪声并增强MOSFET电路架构
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a MOSFET circuit structure for reducing low frequency flicker noise and an amplifier employing the MOSFET circuit structure, wherein the MOSFET circuit structure includes: a MOSFET section in which a plurality of (N) MOSFETs are connected in parallel; And one of the plurality of (N) MOSFETs is turned off and the N-1 MOSFETs are turned on, so that the complexity of the circuit and the power according to the additional circuit It is possible to minimize the flicker noise generated in the conventional amplifier while maintaining the operation of the amplifier circuit without consuming it.
展开▼