首页> 外国专利> MOSFET MOSFET MOSFET CIRCUIT ARCHITECTURE FOR THE 1/f NOISE REDUCTION AND AMPLIFIER OFHAVING THE MOSFET CIRCUIT ARCHITECTURE

MOSFET MOSFET MOSFET CIRCUIT ARCHITECTURE FOR THE 1/f NOISE REDUCTION AND AMPLIFIER OFHAVING THE MOSFET CIRCUIT ARCHITECTURE

机译:MOSFET MOSFET电路架构,用于降低1 / f噪声并增强MOSFET电路架构

摘要

The present invention relates to a MOSFET circuit structure for reducing low frequency flicker noise and an amplifier employing the MOSFET circuit structure, wherein the MOSFET circuit structure includes: a MOSFET section in which a plurality of (N) MOSFETs are connected in parallel; And one of the plurality of (N) MOSFETs is turned off and the N-1 MOSFETs are turned on, so that the complexity of the circuit and the power according to the additional circuit It is possible to minimize the flicker noise generated in the conventional amplifier while maintaining the operation of the amplifier circuit without consuming it.
机译:本发明涉及一种用于减少低频闪烁噪声的MOSFET电路结构和采用该MOSFET电路结构的放大器,其中该MOSFET电路结构包括:MOSFET部分,其中多个(N)个MOSFET并联连接;并且,多个(N)个MOSFET之一关断,并且N-1个MOSFET导通,因此电路的复杂性和根据附加电路的功率可以使传统技术中产生的闪烁噪声最小化。放大器,同时保持放大器电路的工作而不消耗它。

著录项

  • 公开/公告号KR101603883B1

    专利类型

  • 公开/公告日2016-03-18

    原文格式PDF

  • 申请/专利权人 충북대학교 산학협력단;

    申请/专利号KR20140089203

  • 发明设计人 양병도;우기찬;

    申请日2014-07-15

  • 分类号H03K17/16;H03F3/16;H03K17/687;

  • 国家 KR

  • 入库时间 2022-08-21 14:12:50

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