FINFET ASPECT RATIO DEPENDENT DEPOSITION TO IMPROVE GATE SPACER PROFILE FIN-LOSS AND HARDMASK-LOSS FOR FINFET SCHEME

摘要

The technology disclosed herein is improved FinFET or other gate spacer profile in the other transistor way and reduces the pin loss and also a system and method for the aspect ratio dependent film-forming step to reduce the hard mask loss It included. These techniques include deposition of a protective layer to help profile the aspect ratio dependent adjustment of the structure during manufacture. Plasma and the process gas parameter, the more the amount of the polymer to the surface of the structure visible in the plasma is adjusted to be trapped. For example, the upper part of the structure can capture a larger amount of polymer than in the lower part of the structure. Varying the thickness of the protective layer is such that as any other part of this protection is removed, an optional part of the spacer material. ;