ENHANCEMENT MODE GaN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Incremental GaN transistor and method of forming the same. The enhancement type GaN transistor includes a substrate, a transition layer, a buffer layer composed of a III nitride material, a barrier layer composed of a III nitride material, a gate contact and a source contact, a gate III-V compound containing an acceptor dopant element, Wherein the gate III-V compound and the gate metal are formed and self-aligned by a single photomask process, and the lower portion of the gate metal and the upper portion of the gate compound have the same dimensions. In addition, the enhancement type GaN transistor may have a field plate formed of an ohmic metal, and the drain ohmic metal, the source ohmic metal, and the field plate are formed by a single photomask process.;