DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT USING TWO-DIMENSIONAL NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING DEEP ULTRAVIOLET LIGHT-EMITTING ELEMENT

摘要

The present invention relates to a deep ultraviolet light-emitting element using a two-dimensional nitride semiconductor, and a method for manufacturing the deep ultraviolet light-emitting element. A deep ultraviolet light-emitting element using a two-dimensional nitride semiconductor according to an embodiment of the present invention comprises: a substrate; a gate electrode which is divided into a plurality of segments, and is disposed on the substrate; an insulation layer which is stacked on the substrate and the gate electrode; a light-emitting layer which includes a nitride semiconductor stacked on the insulation layer and formed in a two-dimensional structure, and which is divided into an n-doped region, a p-doped region, and a light-emitting region formed on a junction portion of the n-doped region and the p-doped region; a drain electrode which is disposed on the n-doped region; and a source electrode which is disposed on the p-doped region.;COPYRIGHT KIPO 2016