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PRODUCTION OF THERMOELECTRIC MATERIALS BASED ON BISMUTH AND STIBIUM TELLURIDES

机译:基于铋和碲化锑的热电材料的生产

摘要

FIELD: process engineering.;SUBSTANCE: invention relates to production of thermoelectric materials based on bismuth and stibium tellurides. Claimed process consists in pretreatment of initial components by vacuum distillation, synthesis of initial components in evacuated ampoules at heating to melting and cooling. Crystals are grown by vertical zone recrystallisation with application of high-frequency heating. Note here that the crystals are grown in at least two passes at the rate of not over 2.5-3 cm/h. Said high-frequency heating is conducted in the frequency of 1.76 MHz at the temperature gradient of 200 K/cm. The crystals grown, powders are made with nanostructure not over 200 nm in size to allow anisotropy of properties of every particle. Then, pelletising, sintering and hot extrusion are conducted. Said crystals are grown simultaneously in 6-10 ampoules up to 1 m long. Sintering is executed in the vacuum furnace for a day at about 450 degrees. After extrusion, the specimens are cut mechanically and complex measurements are performed.;EFFECT: higher strength, homogeneous properties, better thermoelectric characteristics.;4 cl, 2 dwg, 3 tbl
机译:技术领域本发明涉及基于碲化铋和锑的热电材料的生产。所要求保护的方法包括通过真空蒸馏对初始组分进行预处理,在加热至熔融和冷却的真空安瓿中合成初始组分。通过高频加热,通过垂直区重结晶来生长晶体。请注意,晶体以不超过2.5-3 cm / h的速度至少生长了两次。所述高频加热以1.76MHz的频率在200K / cm的温度梯度下进行。所生长的晶体粉末的纳米结构尺寸不超过200 nm,以允许每个颗粒的特性各向异性。然后,进行造粒,烧结和热挤出。所述晶体同时在6-10安瓿中生长到1 m长。在约450度的真空炉中进行一天的烧结。挤出后,将样品机械切割并进行复杂的测量。效果:更高的强度,均匀的特性,更好的热电特性; 4 cl,2 dwg,3 tbl

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