N-TYPE BISMUTH TELLURIDE-BASED THERMOELECTRIC MATERIAL HAVING MODULATION STRUCTURE, AND PREPARATION METHOD THEREFOR

摘要

An n-type bismuth telluride-based thermoelectric material having a modulation structure, and a preparation method therefor. The material comprises mixed powder of n-type Bi2Te3 and Bi2Te3-xSex in an equimolar ratio, wherein x is greater than or equal to 0.1 and less than or equal to 0.9. The internal structure of crystal atoms of the n-type bismuth telluride-based thermoelectric material having a modulation structure is the modulation structure; the purity of Bi2Te3 powder is greater than or equal to 99.99 wt%, and the particle size of the Bi2Te3 powder is smaller than or equal to 500 μm; and the purity of Bi2Te3-xSex powder is greater than or equal to 99.99 wt%, the particle size of the Bi2Te3-x>Se powder is less than or equal to 500 μm, and x is greater than or equal to 0.1 and less than or equal to 0.9.