Non-planar semiconductor device with self-aligned ridge with upper barrier layer

摘要

Non-planar semiconductor devices with self-aligned lands with top barrier layers and methods for fabricating non-planar semiconductor devices with self-aligned lands with top barrier layers are described. For example, a semiconductor structure includes a semiconductor fin having a top surface disposed above a semiconductor substrate. On both sides of the semiconductor fin, an insulating layer is disposed and recessed under the upper surface of the semiconductor fin to provide a protruding portion of the semiconductor fin. The protruding portion has sidewalls and the upper surface. A gate barrier layer has a first portion disposed on at least a portion of the top surface of the semiconductor fin and has a second portion disposed on at least a portion of the sidewalls of the semiconductor fin. The first portion of the gate blocking layer merges into the second portion of the gate barrier layer but is thicker than the second portion. A gate stack is disposed on the first and second portions of the gate blocking layer.