A semiconductor device with field electrode and the field of dielectric and a method for the production and an electronic device

摘要

A semiconductor device (500) comprises a field electrodes structure (160), which is a field electrode (165) and a the field electrode (165) surrounding field has a dielectric (161). The field dielectric (161) comprises a first dielectric layer (161a) and a second dielectric layer (161b), which have a smaller band gap and / or a lower line strip edge than the first dielectric layer (161a) has. A semiconductor body (100) comprises a ones (ts), which the field electrodes structure (160) and directly to the first dielectric layer (161a) borders. The ones (ts) comprises a source zone (110), a first drift zones section (121a) and a the source zone (110) and the first drift zones section (121a) separating body zone (115). The body zone (115) forms a first pn - transition (pn1) with the source zone (110) and a second pn - transition (pn2) with the first drift zones section (121a).