A hybrid power amplifier - the heterojunction bipolar transistors (hbts) and complementary metal oxide - semiconductor (cmos) - devices

摘要

Such a hybrid - the heterojunction bipolar transistor (hbt) rf (radio frequency) - power amplifier comprises a first device, the one input terminal for receiving a rf - signal, an pre-drivers stage for amplifying said received rf - signal and an outlet connection, wherein the input terminal, the pre-drivers stage and the output port in or via a first substrate are arranged, and a second device, which has a main stage, which has an hbt - amplifier circuit, which, in or via a second substrate is arranged to the of the pre-drivers stage amplified rf - signal further to enhance. The of the main stage is further amplified rf - signal via the output terminal of said first means output.