Bipolar complementary metal-oxide semiconductor operational amplifier design.

摘要

This dissertation describes the theory, design philosophy and measurement results of a BICMOS operational amplifier fabricated with the BICMOS technology. This technology combines bipolar transistors and MOSFETs in a single integrated circuit.;By retaining the benefits of bipolar and MOS transistors, BICMOS technology is able to produce operational amplifiers with performance equal to or better than that obtainable with either technology individually. BICMOS technology can be tailored more readily than either bipolar or MOS technology alone to improve the performances of an operational amplifier.;For the design of BICMOS operational amplifiers fabricated with the new process technologies, a new theory of designing the circuit is required. This dissertation illustrates unified equations and small-signal equivalent circuits for the design of a two-stage operational amplifier. These unified equations and small-signal equivalent circuits can be used to determine how best to combine the bipolar and MOS devices for a given circuit configuration and to determine the required sizes of bipolar and MOS devices in each stage to optimize performance.