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Low power complementary metal-oxide semiconductor class-G audio amplifier with gradual power supply switching

机译:具有渐变电源开关的低功率互补金属氧化物半导体G类音频放大器

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摘要

The architecture, design and implementation of a low power complementary metal-oxide semiconductor (CMOS) class-G audio amplifier with gradual power-supply switching (GPSS) are presented. The proposed class-G amplifier output stage strategically uses the parallel connection of a class-AB output stage operating from smaller supplies (/), and a class-C output stage (with crossover from to ) operating from higher supplies (/). GPSS is achieved using an efficient biasing scheme with level shifters. Moreover, the proposed biasing scheme in conjunction with negative feedback enables low distortion during the power-supply transition. Experimentally, the class-G amplifier prototype achieves a −82.5 dB THD + N, a peak load power of 50 mW and a quiescent power consumption of 350 μW. The proposed class-G amplifier was implemented in a standard CMOS 90 nm technology and occupies an active silicon area of 0.08 mm.
机译:提出了具有渐进式电源开关(GPSS)的低功率互补金属氧化物半导体(CMOS)G类音频放大器的架构,设计和实现。拟议中的G类放大器输出级在策略上使用了由较小电源(/)供电的AB类输出级和由较高电源(/)供电的C类输出级(从至交叉)的并联连接。 GPSS通过使用带有电平转换器的有效偏置方案来实现。此外,与负反馈结合的拟议偏置方案可在电源过渡期间实现低失真。实验上,G类放大器原型实现了-82.5 dB的THD + N,50 mW的峰值负载功率和350μW的静态功耗。拟议中的G类放大器采用标准CMOS 90 nm技术实现,并占用0.08 mm的有源硅面积。

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