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HYBRID POWER AMPLIFIER COMPRISING HETEROJUNCTION BIPOLAR TRANSISTORS (HBTs) AND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES
HYBRID POWER AMPLIFIER COMPRISING HETEROJUNCTION BIPOLAR TRANSISTORS (HBTs) AND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES
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机译:包含异质结双极性晶体管(HBT)和互补金属氧化物半导体(CMOS)器件的混合功率放大器
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摘要
A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.
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