Integrated circuits with the vertical connection between nfets and pfets and method for producing the same

摘要

There are integrated circuits and methods for making available the same. A method for fabricating an integrated circuit comprises a form of an implantation mask, which a dummy - gate is superimposed, in the implantation mask a masked dummy - gate and a free-floating dummy - gate forms. In the exposed dummy - gate ions are implanted and the implantation mask is removed. The masked dummy - gate g is etched with an etchant which, with respect to the masked dummy - gate via the exposed dummy - gate is selective, in order to form a trench, and the trench is filled with a conductive material.