The paper presents a description of a method to produce capacitors in integrated circuits that consists in implanting weakly doped silicon with the same impurity, then subjecting it to annealing (producing the inner plate), and implanting it again with ions of neutral elements to produce the dielectric layer. Results of the testing capacitors produced that way are also presented. Unit capacity of C_u = 4.5nF/mm~2 at tgδ = 0.01 has been obtained. The authors are of the opinion that the interesting problem of discontinuous variations of dielectric losses and capacities considered as functions of temperature, must be viewed as an open problem.
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