Monolithically integrated iii - v - opti-electronic detection system with si - cmos

摘要

A method of forming a monolithically integrated iii - v - opti-electronic detection system with a complementary metal oxide semiconductor silicon - - - (cmos, complementary metal - oxides - semiconductor -) component. The method can comprise: the formation of a recessed waveguide in a recessed oxide - (box) - layer of a semiconductor - to - insulator - (soi -) substrate; forming a first optoelectronic component and a second optoelectronic component adjacent to the recessed waveguide; and a forming a cmos - component on a semiconductor layer by means of the box - layer.