A bilayer graphene tunneling field effect transistor

摘要

A bilayer graphene tunneling field effect transistor comprising: a. A bilayer graphene layer, and b. At least a top gate electrode and a bottom gate electrode, wherein said at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: i. a source region, ii. a channel region, and iii. a drain region.