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METAL OXIDE SEMICONDUCTOR SENSOR AND METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION
METAL OXIDE SEMICONDUCTOR SENSOR AND METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION
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机译:金属氧化物半导体传感器及利用原子层沉积形成金属氧化物半导体传感器的方法
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摘要
A semiconductor sensor device includes a substrate, a non-suitable seed layer located above the substrate, at least one electrode located above the non-suitable seed layer, and a porous sensing layer supported directly by the non-suitable seed layer and in electrical communication with the at least one electrode, the porous sensing layer defining a plurality of grain boundaries formed by spaced-apart nucleation on the non-suitable seed layer using atomic layer deposition.
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