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PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM
PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM
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机译:等离子电极,等离子处理电极,CVD电极,等离子CVD设备以及用薄膜制造基材的方法
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摘要
The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.
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