首页> 外国专利> PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM

PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM

机译:等离子电极,等离子处理电极,CVD电极,等离子CVD设备以及用薄膜制造基材的方法

摘要

The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.
机译:本发明是一种等离子电极,包括:电极主体,在其外周表面上具有放电表面;所述电极主体的内部具有布置在其中的磁体,用于在所述放电表面上形成隧道形磁场;以及在所述电极主体的内部具有磁体。接地部件与放电表面的至少一部分之间具有间隙并且彼此面对,以将电极主体夹在其间。放电表面围绕电极主体的外周,或者在其之间或者不存在间隙。根据本发明,提供了一种能够同时实现提高的等离子体处理速度和稳定的放电的等离子体电极。

著录项

  • 公开/公告号EP3073808A4

    专利类型

  • 公开/公告日2017-04-19

    原文格式PDF

  • 申请/专利权人 TORAY INDUSTRIES INC.;

    申请/专利号EP20140863952

  • 发明设计人 KAWASHITA MAMORU;EJIRI HIROE;

    申请日2014-11-12

  • 分类号H05H1/46;C23C16/50;H01J37/32;H01J37/34;

  • 国家 EP

  • 入库时间 2022-08-21 14:05:33

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