CRYSTALLIZATION OF ADDITIVES AT P/N JUNCTIONS OF BULK-HETEROJUNCTION PHOTOACTIVE LAYERS

摘要

Disclosed is a method for making a bulk-heterojunction photoactive layer, positioning an additive at an interface of a bulk-heterojunction photoactive layer, or enhancing the efficiency of a bulk-heterojunction photoactive layer, the method comprising obtaining a mixture comprising a solvent, an electron donor material, an electron acceptable material, and an additive solubilized in the solvent, wherein the additive has a high (negative) enthalpy of crystalization (ΔHcryst), and forming a bulk-heterojunction photoactive layer from the mixture, wherein crystals of the additive are formed and positioned at an interface between the electron donor material and the electron acceptor material of the bulk-heterojunction photoactive layer.