Raman study of bulk-heterojunction morphology in photoactive layers treated with solvent-vapor annealing

摘要

The effect of solvent-vapor annealing (SVA) on bulk-heterojunction morphology in photoactive layers composed of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) was analyzed using Raman spectroscopy. We prepared the photoactive layers by electrostatic spray deposition (ESD) and fabricated organic photovoltaic devices with a conventional cell structure. Although postdeposition annealing can be omitted when the photoactive layer is deposited using ESD under dry condition, the surface is relatively rough owing to the existence of a number of droplet traces. The SVA treatment can eliminate such droplet traces, while excessive SVA resulted in a significant decrease in open-circuit voltage. The Raman study of the bulk-heterojunction morphology demonstrated the accumulation of P3HT molecules on the surface during SVA, which induced the recombination of photogenerated charges at the interface of the cathode/photoactive layer and thereby decreased the open-circuit voltage. (C) 2018 The Japan Society of Applied Physics