HIGH VOLTAGE P TYPE LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TUBE

摘要

A high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10) comprises: a substrate (100); an N-type lateral double-diffused metal oxide semiconductor field effect transistor (200) formed on the substrate (100); and a P-type metal oxide semiconductor field effect transistor (300) formed at a drain of the N-type lateral double-diffused metal oxide semiconductor field effect transistor (200); wherein a gate of the P-type metal oxide semiconductor field effect transistor (300) serves as a gate of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10); a drain of the P-type metal oxide semiconductor field effect transistor (300) serves as a drain of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10); a source of the N-type lateral double-diffused metal oxide semiconductor field effect transistor (200) serves as a source of the high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10).