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RF AMPLIFIER MODULE AND METHODS OF MANUFACTURE THEREOF

机译:射频放大器模块及其制造方法

摘要

An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.
机译:放大器模块包括模块基板。导电互连结构和放大器装置耦合到模块基板的顶表面。互连结构部分覆盖模块基板顶表面,以在顶表面上限定无导体的区域。放大器装置包括半导体衬底,晶体管,耦合到半导体衬底的底表面和互连结构中的至少一个的导电部件以及电耦合到晶体管的滤波器电路。导电特征仅部分地覆盖半导体衬底底表面以限定跨越底表面的一部分的无导体区域。无导体区域与模块基板顶表面处的无导体区域中的至少一个对准。滤波电路包括形成在半导体衬底顶表面的与无导体区域直接相对的部分上的无源部件。

著录项

  • 公开/公告号EP3133735A1

    专利类型

  • 公开/公告日2017-02-22

    原文格式PDF

  • 申请/专利权人 NXP USA INC.;

    申请/专利号EP20160182864

  • 发明设计人 JONES JEFFREY K.;

    申请日2016-08-04

  • 分类号H03F3/195;H03F3/21;H03F3/213;H03F1/02;H03F1/56;H01L23/498;H01L21/48;H01L49/02;

  • 国家 EP

  • 入库时间 2022-08-21 14:02:49

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