MANUFACTURING METHOD OF GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To achieve low stress distribution of a grown gallium nitride crystal.;SOLUTION: A manufacturing method of a gallium nitride crystal includes a preparation step for preparing a columnar first gallium nitride crystal having a lattice constant of (a)axial length less than 0.3189 nm, and a growth step for growing a second gallium nitride crystal around the first gallium nitride crystal. The first gallium nitride crystal preferably has a lattice constant of (c)axial length less than 0.5170 nm. The preparation step includes a first step for manufacturing one or more gallium nitride crystals by a flux method and a second step for selecting the first gallium nitride crystal from the one or more gallium nitride crystals.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT