Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride NanocompositesviaTransamination of M(NMe2)32, M = Al, Al/Ga (1/1)

摘要

Reactions of Al(NMe2)32 with NH3, mimicking the case of the related Ga-derivative, provided an Al-amide-imide precursor that was pyrolyzed to pure nanocrystalline AlN. Based on that chemistry, a mixed Al/Ga precursor system was designed to lead to the bimetallic nitride composites. A prototype study included equilibration in hexane or toluene of the dimers M(NMe2)32, M = Al, Ga, which resulted in the formation of homoleptic four-membered ring compound (Me2N)2Al(mu-NMe2)2Ga(NMe2)2. Crystalline M(NMe2)32, M = Al/Ga (1/1), obtained from this equilibration was structurally characterized. Transamination/deamination reactions carried out with liquid NH3 in the pre-equilibrated bimetallic system M(NMe2)32/Ga(NMe2)32, Al/Ga = 1/1, resulted in the mixed M-amide-imide precursors that were converted at 700 to 1100 deg C to aluminum/gallium nitride nanocomposite materials. The nature of these bulk nanocomposites has been elucidated by XRD, TEM/EDS, IR, and PL techniques.