首页> 外国专利> NITRIDE SEMICONDUCTOR LASER DEVICE, NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT

NITRIDE SEMICONDUCTOR LASER DEVICE, NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT

机译:氮化物半导体激光装置,氮化物半导体激光元件以及制造氮化物半导体激光元件的方法

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device capable of easily controlling light output, a nitride semiconductor laser element, and a manufacturing method capable of easily manufacturing such a semiconductor laser element.;SOLUTION: A nitride semiconductor laser element comprises an optical waveguide structure which emits light from a front end and emits light weaker than the front end from the rear end, and a wavelength conversion member mounted on the rear end side of the optical waveguide structure and for converting the light emitted from the rear end to light with a different wavelength.;SELECTED DRAWING: Figure 5;COPYRIGHT: (C)2017,JPO&INPIT
机译:解决的问题:提供一种能够容易地控制光输出的氮化物半导体激光器件,氮化物半导体激光元件以及能够容易地制造这种半导体激光元件的制造方法。从前端发出光并且从后端发出比前端弱的光的波导结构,以及安装在光波导结构的后端侧并且将从后端发出的光转换为光的波长转换部件。 ;选择的图纸:图5;版权:(C)2017,JPO&INPIT

著录项

  • 公开/公告号JP2017084912A

    专利类型

  • 公开/公告日2017-05-18

    原文格式PDF

  • 申请/专利权人 USHIO INC;

    申请/专利号JP20150210183

  • 申请日2015-10-26

  • 分类号H01S5/022;H01S5/0683;

  • 国家 JP

  • 入库时间 2022-08-21 14:01:24

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号