GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD, METHOD OF EVALUATING END FACE FOR OPTICAL RESONATOR OF GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD OF EVALUATING SCRIBE GROOVE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser having a laser resonator which enables reduction of disturbance by return light on a semi-polar face of a substrate in which a c-axis of a group III nitride inclines in an m-axis direction.SOLUTION: In a group III nitride semiconductor laser element 11, when an angle ALPHA is within a range of not less than 71 degrees and not more than 79 degrees, an angle 1 is within a range of not less than 10 degrees and not more than 25 degrees and an angle 1 is within a range of not less than zero degrees and not more than 5 degrees. On a first end face 27 near a first surface 13a close to an epitaxial surface, an angle between a first normal vector ENV1 and a c+ axis vector VC+ has a value (e.g., within a range of not less than 10 degrees and not more than 25 degrees) close to the angle 1, in an m-n plane. On the first end face 27 near a substrate rear face 17b, an angle between a second normal vector ENV2 and the c+ axis vector VC+ has a value (e.g., within a range of not less than zero degrees and not more than 5 degrees) close to the angle 1, in the m-n plane.