首页>
外国专利>
POLYMER FOR FORMING RESIST UNDERLAY FILM AND PRODUCTION METHOD THEREOF, COMPOSITION FOR FORMING RESIST UNDERLAY FILM, RESIST UNDERLAY FILM, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE
POLYMER FOR FORMING RESIST UNDERLAY FILM AND PRODUCTION METHOD THEREOF, COMPOSITION FOR FORMING RESIST UNDERLAY FILM, RESIST UNDERLAY FILM, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE
PROBLEM TO BE SOLVED: To provide: a polymer for forming a resist underlay film which allows use of PGMEA or the like as a solvent and enables formation of a resist underlay film excellent in edge rinsing property, solvent resistance, etching resistance, heat resistance and filling property; and a composition for forming a resist underlay film.;SOLUTION: The polymer for forming a resist underlay film has a first repeating unit represented by formula (1) below. In formula (1), Ar1, Ar2 and Ar3 each independently represent a substituted or unsubstituted arenediyl group having 6 to 30 carbon atoms; R1 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 30 carbon atoms; n represents 0 or 1; R2 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms; R3 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms; and R4 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 30 carbon atoms.;SELECTED DRAWING: None;COPYRIGHT: (C)2017,JPO&INPIT
展开▼
机译:解决的问题:提供一种用于形成抗蚀剂衬垫膜的聚合物,该聚合物允许使用PGMEA等作为溶剂,并且能够形成边缘冲洗性能,耐溶剂性,耐蚀刻性,耐热性和抗腐蚀性优异的抗蚀剂衬垫膜。填充物解决方案:用于形成抗蚀剂底膜的聚合物具有由下式(1)表示的第一重复单元。在式(1)中,Ar 1 Sup>,Ar 2 Sup>和Ar 3 Sup>分别独立地表示具有6至30个碳原子的取代或未取代的芳二烷基。 ; R 1 Sup>表示碳原子数1〜30的取代或未取代的二价烃基。 n代表0或1; R 2 Sup>代表氢原子,具有1至10个碳原子的取代或未取代的烷基或具有6至30个碳原子的取代或未取代的芳基; R 3 Sup>表示具有6至30个碳原子的取代或未取代的一价芳族烃基; R 4 Sup>代表氢原子或碳原子数为1至30的取代或未取代的单价烃基。;选图:无;版权:(C)2017,JPO&INPIT
展开▼