METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL GROWING SEED CRYSTAL, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a seed crystal for growing a SiC single crystal for suppressing a through screw dislocation to occur in the vicinity of the interface between the seed crystal and the growth SiC single crystal thereby to reduce a dislocation density thereby to reduce the dislocation density so that a SiC single crystal ingot having the through screw growth can be obtained from a growth initial stage.;SOLUTION: In a seed crystal manufacturing method to be used for growing a SiC single crystal on the seed crystal by a sublimation recrystallization method, a silicon carbide single crystal ingot is cut, and the cut face is mechanically polished toat least 2 μm, and the surface of said mechanically polished face. The SiC single crystal ingot is manufactured by using said seed crystal.;SELECTED DRAWING: Figure 3;COPYRIGHT: (C)2017,JPO&INPIT