GROUP III-V/ZINC CHALCOGENIDE-ALLOYED SEMICONDUCTOR QUANTUM DOTS

摘要

PROBLEM TO BE SOLVED: To provide a forming method for producing photo-luminescent Group III-V zinc chalcogenide-alloyed quantum dots, such as InP (InZnS and the like), on a large scale, which are suitable for commercial applications.SOLUTION: This invention relates to a scalable method for manufacturing narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group III-VI molecular seeding cluster, in which the Group III-VI molecular seeding cluster is fabricated in situ from a zinc salt and a thiol or selenol compound. This invention further relates to a scalable method for synthesizing Group III-V/ZnX (X=chalcogen) quantum dots (QDs), in which zinc acetate and a thiol or selenol compound react in situ to form ZnS- or ZnSe-based molecular seeds, which act as templates for the Group III-V semiconductor core. Exemplary quantum dots include a core containing indium, phosphorus, zinc and either sulfur or selenium.SELECTED DRAWING: Figure 1