The burstein-moss shift in quantum dots of III-V, II-VI and IV-VI semiconductors under parallel magnetic field

摘要

In this paper, we have investigated the Burstein-Moss shift (BMS) in QDs of III-V, II-VI and IV-VI semiconductors in the presence of a parallel magnetic field on the basis of newly formulated carrier disperson laws. It is found, taking QDs of InSb, Cds and CdTe as examples that the BMS increases with increasing doping and decreasing film thickness in ladder loke manners. The numerical values of the BMS in QDs are much greater than that of their corresponding values for bulk specimens. The theoretical results as presented here are in agreement with the experimental observations as reported in literature.