首页> 外国专利> METHOD FOR FORMING ACIGS THIN FILM AT LOW-TEMPERATURE AND METHOD FOR MANUFACTURING SOLAR CELL USING THE SAME

METHOD FOR FORMING ACIGS THIN FILM AT LOW-TEMPERATURE AND METHOD FOR MANUFACTURING SOLAR CELL USING THE SAME

机译:低温形成酸性薄膜的方法和使用该方法制造太阳能电池的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an ACIGS based thin film having high efficiency, applied as the light absorption layer of a solar cell and formed at a relatively low temperature using a simple method.SOLUTION: The method for forming an ACIGS based thin film comprises: the step of forming an Ag thin film; and the ACIGS formation step of vapor-depositing Cu, In, Ga and Se by a simultaneous vacuum deposition method on the surface of the Ag thin film. All Ag constituting the Ag thin film are diffused in the step of vapor-depositing Cu, In, Ga, and Se, and an ACIGS is formed by simultaneously vacuum-deposited Cu, In, Ga and Se during the ACIGS formation step. The ACIGS thin film having an improved power generation efficiency is formed only by a one step simultaneous vacuum deposition method of forming the Ag thin film and simultaneously vacuum depositing CIGS elements at a relatively low temperature of 400°C or less, preferably 300-400°C. The content of the Ag included in the ACIGS thin film is preferably 0.05-0.25 in an Ag/(Ag+Cu) ratio.SELECTED DRAWING: None
机译:解决的问题:提供一种形成高效率的基于ACIGS的薄膜的方法,该方法用作太阳能电池的光吸收层,并使用简单的方法在相对较低的温度下形成。基薄膜包括:形成Ag薄膜的步骤;以及以及通过同时真空沉积法在Ag薄膜的表面上气相沉积Cu,In,Ga和Se的ACIGS形成步骤。构成Ag薄膜的所有Ag在气相沉积Cu,In,Ga和Se的步骤中扩散,并且在ACIGS形成步骤中通过同时真空沉积Cu,In,Ga和Se形成ACIGS。具有发电效率提高的ACIGS薄膜仅通过在400℃以下,优选在300〜400℃以下的相对低温下形成Ag薄膜并同时真空蒸镀CIGS元件的一步真空蒸镀法来形成。 C。 ACIGS薄膜中所含的Ag的含量以Ag /(Ag + Cu)之比计优选为0.05〜0.25。

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