Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

摘要

A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a pinned layer coupled to the barrier layer. The fixed layer comprises a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first attenuation constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second attenuation constant lower than the first attenuation constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first SAF multilayer and the second SAF multilayer.