Method and apparatus for processing wafers having compressive or tensile stress at high temperatures in a plasma enhanced chemical vapor deposition system

摘要

Embodiments of the present disclosure provide an electrostatic chuck for maintaining the flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate support surface, the chuck body having a volume resistivity value of about 250 ° C. to about 700 ° C. The temperature is about 1 × 10 7 Ω · cm to about 1 × 10 15 Ω · cm, and the electrostatic chuck includes an electrode embedded in the main body, and the electrode is connected to a power source. In one example, it has been observed that the chuck body can optimize chucking performance above about 600 ° C. during a deposition or etch process, or any other process that uses both high operating temperature and substrate clamping features. Made of an aluminum nitride material. [Selection] Figure 2