Chemical amplification methods and techniques for developable bottom antireflective coatings and colored implant resists

摘要

The present disclosure describes a method for photosensitive chemical amplification resist (PS-CAR) chemicals for patterning a photosensitive film (eg, a photoresist on an antireflective coating) on a semiconductor substrate. In one embodiment, a higher acid concentration region can be formed in the photoresist layer by a two-step exposure process. The PS-CAR chemical can include a photoacid generator (PAG) and a photosensitizer element that promotes the degradation of PAG to acid. The first exposure may be a patterned EUV or UV exposure that produces an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer, thereby increasing the acid generation rate at the location where the photosensitizer is located in the film stack. The energy distribution during exposure can be optimized by using certain properties (eg, thickness, refractive index, doping) of the photoresist layer, lower layer, and / or upper layer.