Joining structure between ceramic plate and metallic cylindrical member

摘要

The member for a semiconductor manufacturing apparatus includes a susceptor 10 which is a ceramics plate made of AlN and a gas introduction pipe 20 joined to the susceptor 10. An annular pipe joining bank 14 is formed at a position facing the flange 22 of the gas introduction pipe 20 in the susceptor 10. A pipe brazed portion 24 is formed between the flange 22 and the pipe joining bank 14. The flange 22 has a width of 3 mm or more and a thickness of 0.5 mm or more and 2 mm or less. The pipe joining bank 14 preferably has a height of 0.5 mm or more, and when the chamfering of the corner facing the outer edge of the flange 22 is C chamfering, it is C 0.3 or more, and in the case of R chamfering, it is R 0. It is preferably 3 or more.