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Wafer warpage evaluation method and wafer selection method

机译:晶圆翘曲评估方法和晶圆选择方法

摘要

A method for evaluating warpage of a wafer, includes measuring the warpage of the wafer that is in a free state without suction and determining, from measured warpage data, a wafer warpage amount A between two points Q1 and Q2 and a wafer warpage amount B between two points R1 and R2, the points Q1 and Q2 being located on a straight line passing through an arbitrary point P in a wafer plane and a distance “a” away from the point P, the points R1 and R2 being located on the same straight line and a distance “b” away from the point P, the distance “b” differing from the distance “a”, calculating, from the wafer warpage amount A and the wafer warpage amount B, a difference in wafer warpage amount at the point P, and evaluating the warpage on the basis of the difference in wafer warpage amount.
机译:一种用于评估晶片的翘曲的方法,包括:测量处于自由状态而没有抽吸的晶片的翘曲,并根据测得的翘曲数据确定两个点Q1和Q2之间的晶片翘曲量A和之间的晶片翘曲量B。两个点R1和R2,点Q1和Q2位于通过晶圆平面中任意点P的直线上,并且与点P的距离为“ a”,点R1和R2位于同一条直线上线和距离点P的距离“ b”,距离“ b”与距离“ a”不同,并根据晶片翘曲量A和晶片翘曲量B计算点处的晶片翘曲量之差P,并基于晶片翘曲量的差异评估翘曲。

著录项

  • 公开/公告号JP6191534B2

    专利类型

  • 公开/公告日2017-09-06

    原文格式PDF

  • 申请/专利权人 信越半導体株式会社;

    申请/专利号JP20140094469

  • 发明设计人 斉藤 久之;

    申请日2014-05-01

  • 分类号G03F7/20;G01B21/20;

  • 国家 JP

  • 入库时间 2022-08-21 13:54:32

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