Transmission line structure, the multilayer wiring board, a semiconductor device, and semiconductor system

摘要

PROBLEM TO BE SOLVED: To provide a transmission line structure capable of increasing an electric capacitance of a built-in MIM capacitor.;SOLUTION: In a transmission line structure 2A, when a first ellipse E10, a second ellipse E20, a first border line R11, and a second border line R12 are defined, all of a second lamination section adjacent point P1 nearest a first wiring on a conductor layer 31 not sandwiched between a first wiring conductor layer and a second wiring conductor layer, a power source conductor layer adjacent point P2 nearest the first wiring on a power source conductor layer 21, and a GND conductor layer adjacent point P3 nearest the first wiring on a GND conductor layer 23 are arranged outside the first ellipse and the second ellipse. At least one of the second lamination section adjacent point, the power source conductor layer adjacent point, and the GND conductor layer adjacent point is arranged between the first border line and the second border line.;COPYRIGHT: (C)2013,JPO&INPIT