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METHOD TO FABRICATE A HIGH PERFORMANCE CAPACITOR IN A BACK END OF LINE (BEOL)
METHOD TO FABRICATE A HIGH PERFORMANCE CAPACITOR IN A BACK END OF LINE (BEOL)
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机译:在生产线后端建立高性能电容器的方法(BEOL)
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摘要
A method can include applying a patterned mask over a semiconductor structure, the semiconductor structure having a dielectric layer, forming using the patterned mask a material formation trench intermediate first and second spaced apart metal formations formed in the dielectric layer, and disposing a dielectric material formation in the material formation trench.
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