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Method to fabricate a high performance capacitor in a back end of line (BEOL)
Method to fabricate a high performance capacitor in a back end of line (BEOL)
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机译:在线路后端(BEOL)中制造高性能电容器的方法
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摘要
A method can include applying a patterned mask over a semiconductor structure, the semiconductor structure having a dielectric layer, forming using the patterned mask a material formation trench intermediate first and second spaced apart metal formations formed in the dielectric layer, and disposing a dielectric material formation in the material formation trench.
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