首页>
外国专利>
SILICON CARBIDE SEMICONDUCTOR SWITCHING DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SWITCHING DEVICE
SILICON CARBIDE SEMICONDUCTOR SWITCHING DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SWITCHING DEVICE
展开▼
机译:碳化硅半导体开关装置和制造碳化硅半导体开关装置的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A silicon carbide semiconductor switching device having a planar metal oxide semiconductor insulated gate structure. The silicon carbide semiconductor switching device includes a silicon carbide semiconductor substrate having a bandgap wider than that of silicon, a drift layer formed on the silicon carbide semiconductor substrate, a base region selectively formed in the drift layer at a top surface thereof, a source contact region selectively formed in the base region at a top surface thereof, a trench formed in the drift layer at the top surface thereof, the trench having a depth that is shallower than a depth of the source contact region, a gate electrode embedded in the trench, a top surface of the gate electrode being substantially flush with a top surface of the source contact region, and an interlayer insulating film formed on the top surfaces of the source contact region and the gate electrode.
展开▼