In-Cu Alloy Sputtering Target And Method For Producing The Same

摘要

The purpose of the present invention is to provide an In—Cu alloy sputtering target member having high compositional homogeneity in the thickness direction. The present invention provides a sputtering target member having a composition containing from 1 to 70 at. % of Cu relative to a total number of atoms of In and Cu, the balance being In and inevitable impurities, wherein the target member fulfills 0.95≦A/B≦1, where A represents a Cu atomic concentration relative to the total number of atoms of In and Cu in one half of a thickness direction; B represents a Cu atomic concentration relative to the total number of atoms of In and Cu in the other half of the thickness direction; and B≧A; and wherein a number of pores having a size of 100 μm or more is less than 10/cm² on average.