SINTERED IN-CU SPUTTERING TARGET AND METHOD OF MANUFACTURING SINTERED IN-CU SPUTTERING TARGET

摘要

Provided is a sintered In-Cu sputtering target characterized by having a composition containing In in the range of 10-90 at.%, with the remainder being Cu and unavoidable impurities, and by having a theoretical density ratio of at least 97% and a variation in density of no more than 2%.