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COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
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机译:互补金属氧化物半导体场效应晶体管,金属氧化物半导体场效应晶体管及其制造方法
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摘要
A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is disposed on the substrate within a first transistor region and the second MOSFET is disposed on the substrate within a second transistor region. The first MOSFET includes a first fin structure, two first lightly-doped regions, two first doped regions and a first gate structure. The first fin structure includes a first body portion and two first epitaxial portions, wherein each of the first epitaxial portions is disposed on each side of the first body portion. A first vertical interface is between the first body portion and each of the first epitaxial portions so that the first-lightly doped region is able to be uniformly distributed on an entire surface of each first vertical interface.
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