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SYSTEM AND METHOD FOR DETERMINING FIELD NON-UNIFORMITIES OF A WAFER PROCESSING CHAMBER USING A WAFER PROCESSING PARAMETER

机译:利用晶片加工参数确定晶片加工腔场不均匀性的系统和方法

摘要

A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.
机译:公开了一种用于控制晶片处理室的状况的系统。根据本公开的原理,该系统包括存储器和第一控制器。存储器存储多个第一控制元件中的各个第一控制元件的多个轮廓。多个第一控制元件布置在整个腔室中。第一控制器确定与多个第一控制元件相关联的基板处理参数中的不均匀性。基板处理参数与腔室条件不同。第一控制器基于基板处理参数的不均匀性和基板处理参数对条件的灵敏度来调整多个轮廓中的至少一个。

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