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Growth of silicon and boron nitride nanomaterials on carbon fibers by chemical vapor deposition

机译:通过化学气相沉积法在碳纤维上生长硅和氮化硼纳米材料

摘要

Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.
机译:在由碳纤维形成的碳基底上生长氮化硼纳米管和硅纳米线的方法。该方法包括将催化剂溶液施加到碳基底上,并在化学气相沉积反应性物质的存在下在炉中加热涂覆有催化剂的碳基底,以形成氮化硼纳米管和硅纳米线。将由硼酸和尿素形成的第一气相沉积前体与由硝酸铁,硝酸镁和D-山梨醇形成的第二气相沉积前体的混合物提供至炉中以形成氮化硼纳米管。在大气压下将包括SiH 4 的硅源提供给熔炉,以形成硅纳米线。

著录项

  • 公开/公告号US9676627B2

    专利类型

  • 公开/公告日2017-06-13

    原文格式PDF

  • 申请/专利权人 UNIVERSITY OF DAYTON;

    申请/专利号US201514712523

  • 发明设计人 LINGCHUAN LI;

    申请日2015-05-14

  • 分类号C23C16/34;C01B21/064;C23C16/22;C23C16/24;C23C16/46;C01B33/029;

  • 国家 US

  • 入库时间 2022-08-21 13:46:20

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