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Superjunction device and semiconductor structure comprising the same
Superjunction device and semiconductor structure comprising the same
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机译:超结器件和包括该超结器件的半导体结构
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摘要
The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. The drift region includes first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region, and a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, and a source region of a first conduction type embedded into said body region. There is no source region along at least 10% of the total interface length between the first dielectric layer and the body region.
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