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METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE
METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE
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机译:提高替换门设备可靠性的方法
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摘要
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
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