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Method of fabricating nano-scale structures and nano-scale structures fabricated using the method

机译:纳米级结构的制造方法以及使用该方法制造的纳米级结构

摘要

The invention provides a fabrication method of batch producing nano-scale structures, such as arrays of silicon pillars of high aspect ratio. The invention also relates to providing arrays of high aspect ratio silicon pillars fabricated using the improved fabrication method. The array of silicon pillars is fabricated from arrays of low aspect ratio pyramid-shaped structures. Mask formed from a hard material, such as a metal mask, is formed on top of each of the pyramid-shaped structures in a batch process. The pyramid-shaped structures are subsequently etched to remove substrate materials not protected by the hard masks, so that a high aspect ratio pillar or shaft is formed on the pyramid-shaped low aspect ratio base, resulting in an array of high aspect ratio silicon pillars.
机译:本发明提供了批量生产纳米级结构的制造方法,所述结构例如是高纵横比的硅柱的阵列。本发明还涉及提供使用改进的制造方法制造的高纵横比硅柱的阵列。硅柱的阵列由低纵横比的金字塔形结构的阵列制成。由诸如金属掩模的硬质材料形成的掩模以分批工艺形成在每个金字塔形结构的顶部上。随后蚀刻金字塔形结构以去除不受硬掩模保护的衬底材料,从而在金字塔形低纵横比的基底上形成高纵横比的柱或轴,从而形成高纵横比的硅柱的阵列。 。

著录项

  • 公开/公告号US9522821B2

    专利类型

  • 公开/公告日2016-12-20

    原文格式PDF

  • 申请/专利权人 BO CUI;RIPON KUMAR DEY;

    申请/专利号US201414785338

  • 发明设计人 BO CUI;RIPON KUMAR DEY;

    申请日2014-04-09

  • 分类号H01L21;B81C1;H01L21/311;H01L21/3065;H01L21/3213;B81B1;B82Y40;G01Q70/12;B82Y30;

  • 国家 US

  • 入库时间 2022-08-21 13:43:36

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