Etch stop in a dep-etch-dep process

摘要

Described herein is a method of forming semiconductor devices. The method comprises depositing an etch stop layer of titanium aluminum carbide in a cavity of a semiconductor device; depositing a first layer of metal on the etch stop layer; etching the first layer of metal to create an etch-modified surface of the first layer of metal; and depositing a second layer of metal on the etch-modified surface of the first layer of metal.