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Non-volatile semiconductor memory device and memory system in which write operation is resumed after being suspended for an interrupt operation
Non-volatile semiconductor memory device and memory system in which write operation is resumed after being suspended for an interrupt operation
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机译:非易失性半导体存储装置和存储系统,其中在中断操作被暂停之后恢复写操作
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摘要
A non-volatile semiconductor memory device includes a memory cell array and a control circuit. A control circuit performs an erase operation providing a memory cell with a first threshold voltage level for erasing data of a memory cell, and then perform a plurality of first write operations providing a memory cell with a second threshold voltage level, the second threshold voltage level being higher than the first threshold voltage level and being positive level. When the control circuit receives a first execution instruction from outside during the first write operations, the first execution instruction being for performing first function operation except for the erase operation and the first write operations, the circuit performs the first function operation during the first write operations.
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